Zhang, Yongfeng; Liu, Shuainan; Xu, Ruiliang; Ruan, Shengping; Liu, Caixia; Ma, Yan; Li, Xin; Chen, Yu; Zhou, Jingran Source: Nanotechnology, v 35, n 16, April 15, 2024;

Abstract:

β-Ga2O3 has been widely investigated for its stability and thermochemical properties. However, the preparation of β-Ga2O3 thin films requires complex growth techniques and high growth temperatures, and this has hindered the application of β-Ga2O3 thin films. In this study, β-Ga2O3 thin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based on β-Ga2O3 with a photocurrent of 2.54 × 10 A and a dark current of 1.19 × 10 A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between Nb2C and Ga2O3 to create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A W) and good stability. Thus, the Nb2C/β-Ga2O3 heterojunction is expected to be one of the promising devices in the field of UV photoelectric detection.

？ 2024 IOP Publishing Ltd. (57 refs.)